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The MHT1004N from NXP Semiconductors is a RF LDMOS transistor that operates in the 2450 MHz ISM band. It delivers and output power of 300 W with a gain of 15.2 dB and an efficiency of 57.9%. This transistor requires an supply voltage of 32 Volts and consumes a power of 15 Watts. It is available in a OM-780-2L package and is ideal for consumer and commercial cooking applications.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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