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  6. MMRF1320GN

The MMRF1320GN from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 600 MHz, Power 51.76 dBm, Power(W) 149.97 W, P1dB 51.8dBm, Duty_Cycle 0.2. Tags: Flanged. More details for MMRF1320GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1320GN
  • Manufacturer
    NXP Semiconductors
  • Description
    WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    HF, VHF, UHF, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 600 MHz
  • Power
    51.76 dBm
  • Power(W)
    149.97 W
  • CW Power
    150 W
  • P1dB
    51.8dBm
  • Peak Output Power
    150 W
  • Pulsed Power
    150 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    25 to 27.5 dB
  • Input Return Loss
    -16 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.8 to 2.8 Vdc
  • Breakdown Voltage - Drain-Source
    133 to 139 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.72
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.21 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WBG--4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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