The MMRF5017HS from NXP is a RF Power GaN Transistor that operates from 30 to 2200 MHz. It provides an output power of 125 W with an efficiency of 59.1% while operating over a 50 V supply. The transistor is available in a surface mount NI-400S-2S package and is ideal for radar, jammers, EMC testing, mobile radios and wireless cellular infrastructure applications.
