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The MRF6V2010NB from NXP Semiconductors is a RF Transistor with Frequency 10 to 450 MHz, Power 40 dBm, Power(W) 10 W, Power Gain (Gp) 22.5 to 25.5 dB, Input Return Loss -14 to -3 dB. Tags: Flanged. More details for MRF6V2010NB can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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