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The MRF6V2010NB from NXP Semiconductors is a RF Transistor with Frequency 10 to 450 MHz, Power 40 dBm, Power(W) 10 W, Power Gain (Gp) 22.5 to 25.5 dB, Input Return Loss -14 to -3 dB. Tags: Flanged. More details for MRF6V2010NB can be seen below.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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