The MRF8P9210N from NXP Semiconductors is a RF Transistor with Frequency 920 to 960 MHz, Power 47.99 dBm, Power(W) 62.95 W, P1dB 52.9 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MRF8P9210N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF8P9210N
  • Manufacturer
    NXP Semiconductors
  • Description
    Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, 3G / WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    920 to 960 MHz
  • Power
    47.99 dBm
  • Power(W)
    62.95 W
  • CW Power
    63 to 200 W
  • P1dB
    52.9 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    15.3 to 18.3 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.474
  • Drain Current
    750 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.53 °C/W
  • Package Type
    Flanged
  • Package
    CASE 2023--02 OM--780--4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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