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  6. MRF8P9300HS

The MRF8P9300HS from NXP Semiconductors is a RF Transistor with Frequency 920 to 960 MHz, Power 50 dBm, Power(W) 100 W, P1dB 55.1 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MRF8P9300HS can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF8P9300HS
  • Manufacturer
    NXP Semiconductors
  • Description
    Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 100 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    CDMA, GSM, Base Station
  • CW/Pulse
    Pulse, CW
  • Frequency
    920 to 960 MHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • CW Power
    100 W
  • P1dB
    55.1 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 to 21 dB
  • Input Return Loss
    -16 to -10 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.3579
  • Drain Current
    2400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.22 °C/W
  • Package Type
    Flanged
  • Package
    CASE 375E--04, STYLE 1 NI--1230S
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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