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  6. MRFE6S9125NB

The MRFE6S9125NB from NXP Semiconductors is a RF Transistor with Frequency 865 to 960 MHz, Power 44.31 dBm, Power(W) 26.98 W, P1dB 51 dBm, Duty_Cycle 0.01. Tags: Flanged. More details for MRFE6S9125NB can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRFE6S9125NB
  • Manufacturer
    NXP Semiconductors
  • Description
    Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Commercial
  • Application
    Cellular, Base Station, N-CDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    865 to 960 MHz
  • Power
    44.31 dBm
  • Power(W)
    26.98 W
  • CW Power
    27 to 125 W
  • P1dB
    51 dBm
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.01
  • Power Gain (Gp)
    21 to 24 dB
  • Input Return Loss
    -18 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 12 Vdc
  • Drain Efficiency
    0.31
  • Drain Current
    950 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.45 °C/W
  • Package Type
    Flanged
  • Package
    CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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