The MRFE6VS25N from NXP Semiconductors is an LDMOS Transistor that operates from 1.8 to 2000 MHz. It provides a saturated output of 25 W with a gain of 25.4 dB and has a drain efficiency of up to 74.7%. The device is fabricated using Freescale’s enhanced ruggedness platform and is ideal for use in applications where high VSWRs are encountered. It designed for both narrowband and broadband ISM, broadcast, and aerospace applications. The transistor is available in a surface mount or gull-wing package that measures 0.378 x 0.238 x 0.078 inches and 0.378 x 0.238 x 0.077 inches respectively.
