The MRFX035H is a 65 V LDMOS power transistor that operates from 1.8 to 512 MHz. It delivers an output power of up to 35 W CW with an efficiency of more than 32% and a gain of over 17.3 dB. The device can be used in a single-ended or push-pull configuration and is also suitable for linear applications with appropriate biasing. It is available in a surface mount package and is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. This transistor is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch.

Product Specifications

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Product Details

  • Part Number
    MRFX035H
  • Manufacturer
    NXP Semiconductors
  • Description
    35 W CW LDMOS Power Transistor from 1.8 to 512 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, ISM, Wireless Infrastructure, RF Energy, Radar, Broadcast
  • Application
    Industrial, Medical, Scientific, ISM Band, Mobile, Radio, MRI System, VHF, TV, Radar, HF, Base Station
  • CW/Pulse
    CW
  • Frequency
    1.8 to 500 MHz
  • Power
    45.44 dBm
  • Power(W)
    35 W
  • Power Gain (Gp)
    23.5 to 26.5 dB
  • Input Return Loss
    11 to 16 dB
  • Supply Voltage
    65 V
  • Threshold Voltage
    1.7 to 3 V
  • Breakdown Voltage - Drain-Source
    179 to 193 V
  • Feedback Capacitance
    0.13 pF
  • Impedance Zl
    50 Ohms
  • Input Capacitance
    42.8 pF
  • Output Capacitance
    13.7 pF
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

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