The MRFX1K80N is a 65 V LDMOS transistor that operates from 1.8 to 400 MHz. It delivers an output power of up to 1800 W CW with an efficiency of more than 64.9 % and a gain of over 22.8 dB. The device can be used single-ended or in a push-pull configuration and is also suitable for linear applications with appropriate biasing. It is available in a surface mount package and is ideal for high VSWR industrial, scientific and medical applications, radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. This transistor is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch. The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance.
