1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Polyfet RF Devices
  6. LY502

LY502

Download Datasheet
Request Quote

Note : Your request will be directed to Polyfet RF Devices.

LY502 Image

The LY502 from Polyfet RF Devices is a RF Transistor with Frequency 1 to 225 MHz, Power 56 dBm, Power(W) 500 W, Power Gain (Gp) 18 dB, VSWR 10.0:1. Tags: Flanged. More details for LY502 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    LY502
  • Manufacturer
    Polyfet RF Devices
  • Description
    500 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast, Wireless Infrastructure
  • Application
    Radio, Cellular, Base Station, MRI Systems
  • Frequency
    1 to 225 MHz
  • Power
    56 dBm
  • Power(W)
    500 W
  • Power Gain (Gp)
    18 dB
  • Transconductance
    10 MOhms
  • VSWR
    10.0:1
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    20 V
  • Drain Efficiency
    0.7
  • Drain Current
    40 A
  • Drain Bias Current
    4 mA
  • Quiescent Drain Current
    0.80 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    650 W
  • Feedback Capacitance
    15 pF
  • Input Capacitance
    300 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    200 pF
  • Thermal Resistance
    0.25 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
View similar products