The QPD0006 from Qorvo is a single-path High-Electron-Mobility Transistor (HEMT) that operates from 2.5 to 5 GHz. It delivers an output power of 13.5 W (~41.3 dBm) with a gain of 16 dB and a drain efficiency of 75%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process. It requires a DC supply of 48 V and draws 40 mA of current. The transistor is available in a surface-mount DFN package that measures 4.5 x 4 mm and is ideal for WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.
