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QPD0011J

RF Transistor by Qorvo (103 more products)
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QPD0011J Image

The QPD0011J from Qorvo is a RF Transistor with Frequency 3.4 to 3.6 GHz, Power 42 dBm, Power(W) 16 W, Saturated Power 50.2 dBm, Gain 12.6 dB. Tags: Surface Mount. More details for QPD0011J can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD0011J
  • Manufacturer
    Qorvo
  • Description
    GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    5G, Macro Cells, Micro Cell, Active Antenna, 3G / WCDMA, Cellular
  • Frequency
    3.4 to 3.6 GHz
  • Power
    42 dBm
  • Power(W)
    16 W
  • Saturated Power
    50.2 dBm
  • Gain
    12.6 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.58
  • Quiescent Drain Current
    65 mA
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    7.0 x 6.5 mm
  • RoHS
    Yes
  • Grade
    Commercial
View details on the manufacturer's website
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