The QPD0405 from Qorvo is a Dual Path GaN RF Transistor that operates from 4.4 to 5 GHz. It provides a saturated output power of 22 watts (43.4 dBm) with a linear gain of 15.4 dB and has an efficiency of up to 75%. This transistor requires a DC voltage of 48 V and consumes 32.5 mA of current. It is manufactured using a GaN HEMT process and is available in a DFN package that measures 7 x 6.5 mm.
