The ID24330WD from RFHIC is a Power Transistor that operates from 2300 to 2500 MHz. It delivers a saturated output power of 347 W with a gain of 13.5 dB and a drain efficiency of 48%. This asymmetrical Doherty transistor utilizes a Gallium Nitride (GaN) on Silicon Carbide (SiC) process to provide excellent thermal stability. It requires a DC supply of 48 V and consumes less than 6 A of drain current. The transistor is available in a flanged package that measures 15.3 x 5.5 mm and is ideal for use in plasma lighting, RF microwave heating/drying, bio and health science and semiconductor equipment applications. It is internally matched which simplifies system integration.