ID24330WD

RF Transistor by RFHIC | Visit website (57 more products)

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The ID24330WD from RFHIC is a Power Transistor that operates from 2300 to 2500 MHz. It delivers a saturated output power of 347 W with a gain of 13.5 dB and a drain efficiency of 48%. This asymmetrical Doherty transistor utilizes a Gallium Nitride (GaN) on Silicon Carbide (SiC) process to provide excellent thermal stability. It requires a DC supply of 48 V and consumes less than 6 A of drain current. The transistor is available in a flanged package that measures 15.3 x 5.5 mm and is ideal for use in plasma lighting, RF microwave heating/drying, bio and health science and semiconductor equipment applications. It is internally matched which simplifies system integration.

Product Specifications

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Product Details

  • Part Number
    ID24330WD
  • Manufacturer
    RFHIC
  • Description
    347 W GaN Power Transistor from 2.3 to 2.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    ISM
  • Application Type
    RF Heating and Drying, Solid state Microwave OVEN, Semiconductor Equipment, Bio & Health Sciences
  • Application
    Plasma Lighting, Industrial, ISM Band
  • CW/Pulse
    Pulse
  • Frequency
    2300 to 2500 MHz
  • Power
    55.21 to 55.35 dBm
  • Power(W)
    332 to 343 W
  • Saturated Power
    200 to 347 W
  • Gain
    13.5 to 13.6 dB
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    6 A
  • Drain Leakage Current (Id)
    5.8 mA
  • Gate Leakage Current (Ig)
    -3.3 mA
  • Power Dissipation (Pdiss)
    65 to 80 W
  • Junction Temperature (Tj)
    225 Degree C
  • Thermal Resistance
    2.14 °C/W
  • Package Type
    Flanged
  • Dimension
    11.5 x 15.3 x 4.25 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACLR:-33.2 to -30.4 dBc

Technical Documents