The QPD1009 from Qorvo is a GaN on SiC HEMT that operates from DC to 4 GHz. It provides an output power of 17 W with a gain of 24 dB and has a PAE of 72%. The transistor requires a supply voltage of 50 V and consumes up to 26 mA of current. It is available in a 3 x 3 mm QFN package and is ideal for military radar, jammers, land mobile and military radio communications.
