The QPD1011 from Qorvo is a 50 ohm-input matched discrete GaN on SiC HEMT that operates from 30 MHz to 1.2 GHz. It provides a gain of 21 dB with an output power of 8.7 W (P3dB) and has a PAE of 60 % at 1 GHz. This transistor is designed for space-constrained, mission-critical applications ranging from military and land-mobile radio communications to avionics and test instruments. The ROHS compliant device is available in a 5 x 6 mm leadless SMT package. Evaluation boards are available upon request.
