The QPD1018 from Qorvo is a GaN-on-SiC HEMT that operates from 2.7 to 3.1 GHz. It delivers an output power of more than 500 W (P3dB) with a linear gain of 17.7 dB and has a Power Added Efficiency (PAE) of 67.9%. This transistor is based on GaN IMFET technology, requires a DC supply of 50 V, and consumes 750 mA of current. It is available in a surface-mount air cavity package that measures 17.40 x 24.00 x 4.31 mm and is ideal for military radar, civilian radar, and test instrumentation applications. This transistor is internally matched to 50 ?.
