The QPD1029L from Qorvo is a GaN RF Input-Matched Transistor that operates from 1.2 to 1.4 GHz. It provides a P3dB of 1500 Watts with a linear gain of 21.3 dB and PAE of 75% at 1.3 GHz. The device requires a supply voltage of 65 V and features an input prematch within the package which results in ease of external board match and saves board space. This RoHS-complaint transistor is available in an industry-standard air cavity package and is ideally suited for IFF, avionics, test instrumentation, and L-Band radar-amplifier applications. The device can support both CW and pulsed operations.
