The QPD3601 from Qorvo is a discrete GaN on SiC HEMT that operates from 3.4 to 3.6 GHz. It is a single stage matched power amplifier transistor delivering an output power of 180 watts with a drain efficiency of up to 66%. The device can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. This lead-free and ROHS compliant transistor requires a supply voltage of 50 V. It is available in a NI-400 ceramic package and is ideal for active antennas, macro cell base station and other wireless infrastructure applications.
