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RFG1M20090

RF Transistor by Qorvo (103 more products)
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The RFG1M20090 from Qorvo is a RF Transistor with Frequency 1.8 to 2.2 GHz, Power 44 dBm, Power(W) 25.12 W, Saturated Power 49.5 dBm, Gain 14.5 dB. Tags: Flanged. More details for RFG1M20090 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RFG1M20090
  • Manufacturer
    Qorvo
  • Description
    1.8 to 2.2 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Commercial
  • Application
    Commercial, Military, Communication System, 3G / WCDMA, 4G / LTE
  • CW/Pulse
    CW
  • Frequency
    1.8 to 2.2 GHz
  • Power
    44 dBm
  • Power(W)
    25.12 W
  • Peak Output Power
    90 W
  • Saturated Power
    49.5 dBm
  • Gain
    14.5 dB
  • Supply Voltage
    28 to 48 V
  • Threshold Voltage
    -3.5 V
  • Voltage - Gate-Source (Vgs)
    -4.5 to -1.8 V
  • Drain Efficiency
    0.35
  • Drain Bias Current
    300 mA
  • Quiescent Drain Current
    300 mA
  • Package Type
    Flanged
  • Package
    Ceramic

Technical Documents
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