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TGF2819-FL

RF Transistor by Qorvo (103 more products)
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The TGF2819-FL from Triquint is a GaN on SiC HEMT transistor that operates from DC to 3.5 GHz. It provides 20 W of power and has a gain of 14 dB. The power transistor requires a 32 V supply for operation and draws 12 A of current. It can be used in milita

Product Specifications

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Product Details

  • Part Number
    TGF2819-FL
  • Manufacturer
    Qorvo
  • Description
    20 Watt, DC to 3.5 GaN Transistor for Military Radar & Radio applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Broadcast
  • Application
    Military, Communication System, Jammers, Test & Instrumentation, Radio, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    43.01 dBm
  • Power(W)
    20 W
  • Peak Output Power
    100 W
  • Saturated Power
    51 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    14 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Quiescent Drain Current
    250 mA
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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