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TGF2929-FL

RF Transistor by Qorvo (103 more products)
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The TGF2929-FL from Qorvo is a ceramic GaN on SiC HEMT Transistor that operates from DC to 3.5 GHz. It is ideal for military and civilian radars, radio communications, test instrumentation and jammer applications. Operating at 28 V it provides 107 W of power (P3dB) with a gain of more than 14 dB at 3.5 GHz.

Product Specifications

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Product Details

  • Part Number
    TGF2929-FL
  • Manufacturer
    Qorvo
  • Description
    100W, DC to 3.5 GHz, GaN RF Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Broadcast
  • Application
    Military, Communication System, Jammers, Test & Instrumentation, Radio, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    50.29 dBm
  • Power(W)
    106.91 W
  • Saturated Power
    50.3 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    14 dB
  • Supply Voltage
    28 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Quiescent Drain Current
    260 mA
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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