The TGF2933 from Qorvo is a discrete GaN on SiC HEMT that operates from DC to 25 GHz. It delivers an output power of 7.2 W with a gain of 15 dB and a power added efficiency of 57%. This transistor requires a supply voltage of 28 Volts and consumes 80 mA of current. It is available as a die measuring 0.83 x 0.55 x 0.10 mm and is ideal for aerospace, defence and broadband wireless applications.
