The TGF3015-SM from TriQuint is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. It provides an output power (P3dB) of 11 W at 2.4 GHz with a linear gain up to 17.1 dB and a PAE of 62.7 %. It requires a supply of 32 V and draws 50 mA of current. The transistor is available in lead-free package that measures 3 x 3 mm and is RoHS compliant. It can be used in military radar, civilian radar, test instrumentation and professional & military radio communications applications.
