The H019 from RFHIC is a GaN-on-SiC Transistor that operates from 3.4 to 3.8 GHz. It delivers a saturated output power of 15.8 W with a power gain of 18.2 dB and a drain efficiency of 14.5%. This transistor utilizes RFHIC’s OptiGaN GaN-on-SiC technology, which is an ideal choice for using GaN technology without stretching the budget. It requires a DC supply of 48 V. This power transistor is available in a surface-mount package and is ideal for 4G, 4G LTE, and Open RAN applications.
