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H020C11D

RF Transistor by RFHIC | Visit website (83 more products)
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The H020C11D from RFHIC is a RF Transistor with Frequency 1805 to 1880 MHz, Power 48.97 to 56.7 dBm, Power(W) 79 to 468 W, Saturated Power 437 to 468 W, Gain 13.5 to 14 dB. Tags: Flanged. More details for H020C11D can be seen below.

Product Specifications

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Product Details

  • Part Number
    H020C11D
  • Manufacturer
    RFHIC
  • Description
    GaN on SiC HEMT from 1805 to 1880 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application
    WiMax, 4G / LTE, 3G / WCDMA, GSM, Wireless Communication
  • CW/Pulse
    Pulse
  • Frequency
    1805 to 1880 MHz
  • Power
    48.97 to 56.7 dBm
  • Power(W)
    79 to 468 W
  • Peak Output Power
    477.5 to 496.6 W
  • Saturated Power
    437 to 468 W
  • Gain
    13.5 to 14 dB
  • VSWR
    10:1
  • Supply Voltage
    55 V
  • Threshold Voltage
    -3.775 to -2.525 V
  • Breakdown Voltage
    150 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10, +2 V
  • Drain Efficiency
    53 to 54 %
  • Drain Current
    12.8 to 28.8 A
  • Drain Leakage Current (Id)
    4.6 to 11.5 mA
  • Gate Leakage Current (Ig)
    -8.93 to -2 mA
  • Power Dissipation (Pdiss)
    118.5 W
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    250 Degree C
  • Package Type
    Flanged
  • Package
    RF24010DKR3
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    LTE Linearity : -25 to -23 dBc

Technical Documents
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