The ID37411D from RFHIC is a GaN-on-SiC HEMT that operates from 3600 to 3800 MHz. It delivers an output power of 410 W with a gain of 14.4 dB and an efficiency of 47.2%. This transistor has spurious levels of -25.9 dBc and is internally matched. It is ideal for use in high-efficiency Doherty amplifiers and multi-band, multi-mode, 4G LTE & 5G-NR wireless infrastructure applications.
