The ID41411DR from RFHIC is a Doherty GaN-on-SiC HEMT that operates from 3700 to 4100 MHz. It delivers an output power of up to 410 W with a gain of 14.2 dB and an efficiency of 46.1%. This asymmetrical HEMT has spurious levels of -26.1 dBc and is ideal for use in 4G LTE, 5G NR systems, multi-band, multi-mode, and high-efficiency Doherty amplifier applications.
