1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. RFHIC
  6. IE09300PC

IE09300PC

RF Transistor by RFHIC | Visit website (57 more products)
Download Datasheet
Request Quote

Note : Your request will be directed to RFHIC.

IE09300PC Image

The IE09300PC is a GaN Power Transistor that operates from 910 to 920 MHz. It provides over 300 watts of CW power with a gain of 18 dB and efficiency of 80%. This rugged transistor has been developed to replace industrial magnetrons and other vacuum tubes that are currently used in industrial heating, drying, plasma lighting and medical system.

Product Specifications

View similar products

Product Details

  • Part Number
    IE09300PC
  • Manufacturer
    RFHIC
  • Description
    300 Watt GaN Power Transistor from 910 to 920 MHz

General Parameters

  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM
  • Application
    Industrial, Plasma Lighting, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    910 to 920 MHz
  • Power
    55.9 dBm
  • Power(W)
    330 W
  • Saturated Power
    300 to 330 W
  • Gain
    17.1 to 18 dB
  • Power Gain (Gp)
    17.1 to 18 dB
  • Supply Voltage
    50 V
  • Input Power
    5.3 to 6.6 W
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    18 mA
  • Drain Leakage Current (Id)
    16.7 mA
  • Gate Leakage Current (Ig)
    -9.2 mA
  • Power Dissipation (Pdiss)
    165 W
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    225 Degrees C
  • Thermal Resistance
    0.85 °C/W
  • Package Type
    Surface Mount
  • Dimension
    10.2x10.2x4.1 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents
View details on the manufacturer's website
View similar products