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IE09300PC

RF Transistor by RFHIC | Visit website (83 more products)
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The IE09300PC is a GaN Power Transistor that operates from 910 to 920 MHz. It provides over 300 watts of CW power with a gain of 18 dB and efficiency of 80%. This rugged transistor has been developed to replace industrial magnetrons and other vacuum tubes that are currently used in industrial heating, drying, plasma lighting and medical system.

Product Specifications

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Product Details

  • Part Number
    IE09300PC
  • Manufacturer
    RFHIC
  • Description
    300 Watt GaN Power Transistor from 910 to 920 MHz

General Parameters

  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM
  • Application
    Industrial, Plasma Lighting, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    910 to 920 MHz
  • Power
    55.9 dBm
  • Power(W)
    330 W
  • Saturated Power
    300 to 330 W
  • Gain
    17.1 to 18 dB
  • Power Gain (Gp)
    17.1 to 18 dB
  • Supply Voltage
    50 V
  • Input Power
    5.3 to 6.6 W
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    18 mA
  • Drain Leakage Current (Id)
    16.7 mA
  • Gate Leakage Current (Ig)
    -9.2 mA
  • Power Dissipation (Pdiss)
    165 W
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    225 Degrees C
  • Thermal Resistance
    0.85 °C/W
  • Package Type
    Surface Mount
  • Dimension
    10.2x10.2x4.1 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents
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