IE21330P

RF Transistor by RFHIC | Visit website (57 more products)

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The IE21330P from RFHIC is a RF Transistor with Frequency 2.11 to 2.17 GHz, Power 55.18 dBm, Power(W) 329.61 W, Saturated Power 55.18 dBm, Gain 15.6 dB. Tags: Flanged. More details for IE21330P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE21330P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.11 to 2.17 GHz
  • Power
    55.18 dBm
  • Power(W)
    329.61 W
  • Saturated Power
    55.18 dBm
  • Gain
    15.6 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.392
  • Package Type
    Flanged
  • Package
    NS-AS01

Technical Documents