The IE24100P from RFHIC is a GaN-on-SiC Transistor that operates from 2400 to 2500 MHz. It delivers an output power of 100 W with a gain of 15 dB and an efficiency of 73.3%. This transistor is based on RFHIC’s cutting-edge gallium nitride (GaN) solid-state technology and is designed to replace current vacuum tubes like the magnetron, klystron, and or TWTA. It can operate in both continuous wave (CW) and pulse modes and requires a DC supply of 52 V. The transistor is available in a package with flanges and is ideal for microwave heating, microwave drying, microwave ablation, microwave plasma generation, and microwave lighting applications.
