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IE27330P

RF Transistor by RFHIC | Visit website (83 more products)
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The IE27330P from RFHIC is a RF Transistor with Frequency 2.62 to 2.69 GHz, Power 55.19 dBm, Power(W) 330.37 W, Saturated Power 55.19 dBm, Gain 15.4 dB. Tags: Flanged. More details for IE27330P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE27330P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.62 to 2.69 GHz
  • Power
    55.19 dBm
  • Power(W)
    330.37 W
  • Saturated Power
    55.19 dBm
  • Gain
    15.4 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.3909
  • Package Type
    Flanged
  • Package
    NS-AS01
View details on the manufacturer's website
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