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RF2L15200CB4

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RF2L15200CB4 Image

The RF2L15200CB4 from STMicroelectronics is a RF Transistor with Frequency 860 MHz to 1.5 GHz, Power 53.01 dBm, Power(W) 200 W, Power Gain (Gp) 17.5 dB, VSWR 10.00:1. Tags: Flanged. More details for RF2L15200CB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF2L15200CB4
  • Manufacturer
    STMicroelectronics
  • Description
    200 W, LDMOS RF Transistor from 860 MHz to 1.5 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics, Commercial, Broadcast, Wireless Infrastructure
  • Application
    Communication System, Commercial, Industrial
  • CW/Pulse
    CW, Pulse
  • Frequency
    860 MHz to 1.5 GHz
  • Power
    53.01 dBm
  • Power(W)
    200 W
  • Power Gain (Gp)
    17.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.75 to 2.5 V
  • Drain Gate Voltage
    1.75
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 V
  • Current
    0.5 mA to 2.5 A
  • Drain Efficiency
    0.72
  • Drain Bias Current
    2.5
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    100 nA
  • Feedback Capacitance
    1.6 pF
  • Input Capacitance
    92 pF
  • Junction Temperature (Tj)
    200 Degree C
  • On Resistance
    1 Ohms
  • Output Capacitance
    39 pF
  • Voltage Rating
    32 V
  • Thermal Resistance
    0.35 Degree C/W
  • Package Type
    Flanged
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
View details on the manufacturer's website
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