1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. STMicroelectronics
  6. RF3L05250CB4

RF3L05250CB4

Request Quote

Note : Your request will be directed to STMicroelectronics.

RF3L05250CB4 Image

The RF3L05250CB4 from STMicroelectronics is a RF Transistor with Frequency DC to 1 GHz, Power 53.97 dBm, Power(W) 250 W, Power Gain (Gp) 18 dB, VSWR 20.00:1. Tags: Flanged. More details for RF3L05250CB4 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RF3L05250CB4
  • Manufacturer
    STMicroelectronics
  • Description
    250 W, LDMOS / FET RF Transistor from DC to 1 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Avionics, Commercial, Wireless Infrastructure
  • Application
    HF, Communication System, Commercial, Jammers, ISM Band
  • CW/Pulse
    CW
  • Frequency
    DC to 1 GHz
  • Power
    53.97 dBm
  • Power(W)
    250 W
  • Power Gain (Gp)
    18 dB
  • VSWR
    20.00:1
  • Supply Voltage
    28 to 32 V
  • Threshold Voltage
    1.75 to 2.5 V
  • Drain Gate Voltage
    1.75
  • Breakdown Voltage - Drain-Source
    90 V
  • Voltage - Drain-Source (Vdss)
    90 V
  • Voltage - Gate-Source (Vgs)
    -8 to 10 V
  • Current
    100 mA
  • Drain Efficiency
    0.62
  • Drain Bias Current
    2.5
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    100 nA
  • Feedback Capacitance
    2.4 pF
  • Input Capacitance
    128 pF
  • Junction Temperature (Tj)
    200 Degree C
  • On Resistance
    1 Ohms
  • Output Capacitance
    43 pF
  • Voltage Rating
    36 V
  • Thermal Resistance
    0.32 Degree C/W
  • Package Type
    Flanged
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
View details on the manufacturer's website
View similar products