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RF5L15030CB2

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The RF5L15030CB2 from STMicroelectronics is a RF Transistor with Frequency 1 to 1.5 GHz, Power 44.77 dBm, Power(W) 30 W, Duty_Cycle 10%, Power Gain (Gp) 23.5 dB. Tags: Flanged. More details for RF5L15030CB2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF5L15030CB2
  • Manufacturer
    STMicroelectronics
  • Description
    30 W, LDMOS / FET RF Transistor from 1 to 1.5 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Avionics, Radar, Avionics, Wireless Infrastructure
  • Application
    Industrial, Scientific, Medical, VHF, L Band, Radar, Communication System, HF
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 1.5 GHz
  • Power
    44.77 dBm
  • Power(W)
    30 W
  • Pulsed Width
    100 µs
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    23.5 dB
  • VSWR
    10.00:1
  • Class
    Class AB, B, C
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 V
  • Drain Gate Voltage
    1
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Drain-Source (Vdss)
    1.1 V
  • Drain Efficiency
    0.5
  • Drain Current
    2.5 A
  • Drain Bias Current
    3
  • Drain Leakage Current (Id)
    1 µA
  • Gate Leakage Current (Ig)
    100 nA
  • Feedback Capacitance
    0.4 pF
  • Input Capacitance
    28 pF
  • Junction Temperature (Tj)
    200 Degrees
  • On Resistance
    1 Ohms
  • Output Capacitance
    12 pF
  • Thermal Resistance
    2.9 Degree C/W
  • Package Type
    Flanged
  • Grade
    Commercial
  • Operating Temperature
    25 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
  • Note
    Gate quiescent voltage: 2 to 5 V

Technical Documents
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