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ST50V10200

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The ST50V10200 from STMicroelectronics is a RF Transistor with Frequency DC to 1.5 GHz, Power 53.52 dBm, Power(W) 225 W, Power Gain (Gp) 17.5 dB, VSWR 10.00:1. Tags: Flanged. More details for ST50V10200 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ST50V10200
  • Manufacturer
    STMicroelectronics
  • Description
    225 W, LDMOS RF Transistor from DC to 1.5 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics, ISM, Wireless Infrastructure
  • Application
    Industrial, Scientific, Medical, ISM Band
  • CW/Pulse
    CW
  • Frequency
    DC to 1.5 GHz
  • Power
    53.52 dBm
  • Power(W)
    225 W
  • Power Gain (Gp)
    17.5 dB
  • VSWR
    10.00:1
  • Class
    Class AB, B, C
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 V
  • Drain Gate Voltage
    1
  • Breakdown Voltage - Drain-Source
    110 V
  • Drain Efficiency
    0.6
  • Drain Current
    1 uA
  • Drain Bias Current
    3
  • Leakage Current
    1 uA
  • Feedback Capacitance
    44 pF
  • Input Capacitance
    118 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    2 pF
  • Package Type
    Flanged
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series

Technical Documents
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