1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. EGN21C070MK

EGN21C070MK

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

EGN21C070MK Image

The EGN21C070MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.14 GHz, Power 46.5 dBm, Power(W) 44.67 W, Saturated Power 48.5 to 49.5 dBm, Power Gain (Gp) 16 to 17 dB. Tags: Flanged. More details for EGN21C070MK can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    EGN21C070MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.14 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Station, 4G / LTE, L-Band
  • Application
    Base Station, 4G / LTE, L Band
  • Frequency
    2.14 GHz
  • Power
    46.5 dBm
  • Power(W)
    44.67 W
  • Saturated Power
    48.5 to 49.5 dBm
  • Power Gain (Gp)
    16 to 17 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    75 W
  • Thermal Resistance
    2.5 to 3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 76 mA, Reverse Gate Current : -2.6 mA

Technical Documents
View details on the manufacturer's website
View similar products