The EGN26C160I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.6 GHz, Power 49.5 dBm, Power(W) 89.13 W, Saturated Power 51.5 to 52.5 dBm, Power Gain (Gp) 15 to 16 dB. Tags: Flanged. More details for EGN26C160I2D can be seen below.