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EGNC105MK

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The EGNC105MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 900 MHz, Power 48 dBm, Power(W) 63.1 W, Saturated Power 50 to 51 dBm, Power Gain (Gp) 19 to 20 dB. Tags: Flanged. More details for EGNC105MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGNC105MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 900 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Cellular, Wireless Infrastructure, Wireless Communication
  • Application Type
    Base Station, 4G / LTE, L-Band
  • Application
    Base Station, 4G / LTE, L Band, WiMax
  • Frequency
    900 MHz
  • Power
    48 dBm
  • Power(W)
    63.1 W
  • Saturated Power
    50 to 51 dBm
  • Power Gain (Gp)
    19 to 20 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    0.35
  • Power Dissipation (Pdiss)
    97.8 W
  • Thermal Resistance
    2 to 2.3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 102 mA, Reverse Gate Current : -3.9 mA

Technical Documents
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