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EGNC210MK

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The EGNC210MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 900 MHz, Power 50.5 dBm, Power(W) 112.2 W, Saturated Power 52.5 to 53.5 dBm, Power Gain (Gp) 16.5 to 17.5 dB. Tags: Flanged. More details for EGNC210MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGNC210MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 900 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band
  • Application
    Base Station, 4G / LTE
  • Frequency
    900 MHz
  • Power
    50.5 dBm
  • Power(W)
    112.2 W
  • Saturated Power
    52.5 to 53.5 dBm
  • Power Gain (Gp)
    16.5 to 17.5 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    173 W
  • Thermal Resistance
    1.1 to 1.3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 204 mA, Reverse Gate Current : -7.8 mA

Technical Documents
View details on the manufacturer's website
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