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The FHX06X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 10 dBm, Power(W) 0 to 0.01 W, Gain 9.5 to 10.5 dB, Noise Figure 1.1 to 1.35 dB. Tags: Chip. More details for FHX06X can be seen below.
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
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