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FLC107WG

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The FLC107WG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 28.5 to 30 dBm, Power(W) 0.71 to 1 W, P1dB 28.5 to 30 dBm, Power Gain (Gp) 7 to 8 dB. Tags: Flanged. More details for FLC107WG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLC107WG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 8 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C-Band, General Purpose
  • Application
    General Purpose
  • Frequency
    8 GHz
  • Power
    28.5 to 30 dBm
  • Power(W)
    0.71 to 1 W
  • P1dB
    28.5 to 30 dBm
  • Power Gain (Gp)
    7 to 8 dB
  • Power Added Effeciency
    0.36
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    400 to 600 mA
  • Thermal Resistance
    16 to 20 Degree C/W
  • Package Type
    Flanged
  • Package
    WG
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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