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FLC157XP

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The FLC157XP from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 30.5 to 31.5 dBm, Power(W) 1.12 to 1.41 W, P1dB 30.5 to 31.5 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Chip. More details for FLC157XP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLC157XP
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 8 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C-Band, General Purpose
  • Application
    General Purpose
  • Frequency
    8 GHz
  • Power
    30.5 to 31.5 dBm
  • Power(W)
    1.12 to 1.41 W
  • P1dB
    30.5 to 31.5 dBm
  • Power Gain (Gp)
    5 to 6 dB
  • Power Added Effeciency
    0.295
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    600 to 900 mA
  • Thermal Resistance
    15 to 18 Degree C
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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