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The FLK207XV from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 14.5 GHz, Power 31.5 to 32.5 dBm, Power(W) 1.41 to 1.78 W, P1dB 31.5 to 32.5 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Chip. More details for FLK207XV can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLK207XV
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    General Purpose, Ku-Band
  • Application
    General Purpose, Ku Band
  • Frequency
    14.5 GHz
  • Power
    31.5 to 32.5 dBm
  • Power(W)
    1.41 to 1.78 W
  • P1dB
    31.5 to 32.5 dBm
  • Power Gain (Gp)
    5 to 6 dB
  • Power Added Effeciency
    0.27
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    800 to 1200 mA
  • Thermal Resistance
    10 to 12 Degree C
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

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