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FLL107ME

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The FLL107ME from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.3 GHz, Power 28.5 to 29.5 dBm, Power(W) 0.71 to 0.89 W, P1dB 28.5 to 29.5 dBm, Power Gain (Gp) 12.5 to 13.5 dB. Tags: Flanged. More details for FLL107ME can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLL107ME
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2.3 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band, Base Station
  • Application
    L Band, Base Station
  • Frequency
    2.3 GHz
  • Power
    28.5 to 29.5 dBm
  • Power(W)
    0.71 to 0.89 W
  • P1dB
    28.5 to 29.5 dBm
  • Power Gain (Gp)
    12.5 to 13.5 dB
  • Power Added Effeciency
    0.47
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    300 to 450 mA
  • Thermal Resistance
    25 to 36 Degree C/W
  • Package Type
    Flanged
  • Package
    ME
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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