1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. FLM1011-6F

FLM1011-6F

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

FLM1011-6F Image

The FLM1011-6F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 10.7 to 11.7 GHz, Power 36.5 to 37.5 dBm, Power(W) 4.47 to 5.62 W, P1dB 36.5 to 37.5 dBm, Power Gain (Gp) 6.5 to 7.5 dB. Tags: Flanged. More details for FLM1011-6F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLM1011-6F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 10.7 to 11.7 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band, Ku-Band
  • Application
    X Band, Ku Band
  • Frequency
    10.7 to 11.7 GHz
  • Power
    36.5 to 37.5 dBm
  • Power(W)
    4.47 to 5.62 W
  • P1dB
    36.5 to 37.5 dBm
  • Power Gain (Gp)
    6.5 to 7.5 dB
  • Power Added Effeciency
    0.28
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1800 to 2100 mA
  • IMD
    -45 to -42 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    4 to 4.5 Degree C/W
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 2800 to 4200 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : , Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
View similar products