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FLM1314-18F

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The FLM1314-18F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 42 to 42.5 dBm, Power(W) 15.85 to 17.78 W, P1dB 42 to 42.5 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Flanged. More details for FLM1314-18F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM1314-18F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 13.75 to 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    Ku-Band, Communication Bands
  • Application
    Ku Band, Communication System
  • Frequency
    13.75 to 14.5 GHz
  • Power
    42 to 42.5 dBm
  • Power(W)
    15.85 to 17.78 W
  • P1dB
    42 to 42.5 dBm
  • Power Gain (Gp)
    5 to 6 dB
  • Power Added Effeciency
    0.27
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    5000 to 1400 mA
  • IMD
    -25 to -30 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.8 to 2 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 44.6 mA, Channel Temperature : 175 Degree C

Technical Documents
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