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FLM3135-4F

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FLM3135-4F Image

The FLM3135-4F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 35.5 to 36.5 dBm, Power(W) 3.55 to 4.47 W, P1dB 35.5 to 36.5 dBm, Power Gain (Gp) 11 to 12 dB. Tags: Flanged. More details for FLM3135-4F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM3135-4F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 3.1 to 3.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band, Communication
  • Application
    C Band, Communication System
  • Frequency
    3.1 to 3.5 GHz
  • Power
    35.5 to 36.5 dBm
  • Power(W)
    3.55 to 4.47 W
  • P1dB
    35.5 to 36.5 dBm
  • Power Gain (Gp)
    11 to 12 dB
  • Power Added Effeciency
    0.38
  • Transconductance
    2000 mS
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1100 to 1300 mA
  • IMD
    -45 to -42 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    5 to 6 Degree C/W
  • Package Type
    Flanged
  • Package
    IB
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 1950 to 2900 mA, Pinch-off Voltage : -3.5 to -1 V, Gain Flatness : +/-0.6 dB, Channel Temperature Rise : 80 Degree C

Technical Documents
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