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FLM5359-35F

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FLM5359-35F Image

The FLM5359-35F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.3 to 5.9 GHz, Power 45 to 45.5 dBm, Power(W) 31.62 to 35.48 W, P1dB 45 to 45.5 dBm, Power Gain (Gp) 8 to 9 dB. Tags: Flanged. More details for FLM5359-35F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM5359-35F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 5.3 to 5.9 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band, Communication
  • Application
    C Band, Communication System
  • Frequency
    5.3 to 5.9 GHz
  • Power
    45 to 45.5 dBm
  • Power(W)
    31.62 to 35.48 W
  • P1dB
    45 to 45.5 dBm
  • Power Gain (Gp)
    8 to 9 dB
  • Power Added Effeciency
    0.35
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    8500 to 9500 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.1 to 1.3 Degree C/W
  • Package Type
    Flanged
  • Package
    IK
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 16000 to 24000 mA, Pinch-off Voltage : -3.5 to -1 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C

Technical Documents
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